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A new Membrane PSOI High Voltage Device with a Buried P+ layer (MBP+ PSOI) is proposed. Breakdown voltage is only decided by lateral breakdown voltage because of the entire removing of silicon substrate under the drift region and breakdown voltage can be improved with increase of the length of the drift region. Introducing of P+ layer can effectively reduce specific on-resistance and silicon window...
A novel SOI high voltage device with compound dielectric buried layer (CDL SOI) and its analytical model is proposed. The vertical electric field of buried layer is enhanced due to the low k (permittivity) of dielectric layer and the electric field in the drift region is modulated by the compound dielectric layer with different k, and both increases breakdown voltage of device. The electric field...
A new high voltage 4H-SiC Schottky barrier diode (SBD) structure for monolithic microwave integrated circuit (MMIC) applications is proposed. It employs one or more floating metal rings (FMRs) which work similar to guard rings. Influence of FMRs structure on the breakdown voltage and cut-off frequencies of the SBD were studied by numerical device modeling. As compared to the one without ring, about...
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