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A 4Mbit nonvolatile memory with a Carbon Nanotube (CNT) storage element has been manufactured in a 0.25 μm CMOS process at a production fab. The CNT storage element is integrated in BEOL, requires minimal additional processing steps, and only a single additional mask. The memory can be RESET in 50 nanoseconds and SET in 500 nanoseconds. Demonstrated read access time of the development vehicle is 50...
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