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Structural ordered langasite-type piezoelectric crystal Ca3Ta G a 3Si2O14(CTGS) possess excellent high temperature piezoelectric properties. In this work, large size(25mm in diameter and 80mm in length)CTGS single crystalswere grown by using the vertical Bridgman method. High resolution X-ray diffraction technique was applied to characterize the crystal quality, where the as-grown CTGS crystals were...
New rare-earth oxyborate crystals TmCOB were grown by using the Czochralski method. The piezoelectric coefficients for TmCOB were determined to be on the order of d11=1.7, d12=3.8, d13=-4.2, d15=-0.92, d24=4.9, d26=7.8, d31=-0.75, d32=-2.4, d33=2.2 and d35=-5.2 pC/N. The temperature dependence of electro-elastic propertieswereinvestigated from 20 to 900°C, where the temperature coefficients of the...
High temperature piezoelectric crystals, YCa4O(BO3)3 (YCOB) possess relatively high piezoelectric activities (deff = ∼7.8pC/N, keff= ∼19%) and no phase transition prior to the melting point (∼1500°C), indicating the potential use for high temperature sensing. In this work, growth of YCOB single crystals by using Czochralski (Cz) method was introduced and the temperature dependence of electro-elastic...
A large magnetoresistance (MR) effect of few‐layers graphene between two non‐magnetic metal electrodes with current perpendicular to graphene plane is studied. A non‐saturation and anisotropic MR with the value over 60% at 14 T is observed in a two‐layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic...
A CMOS bandgap reference generator with switched-capacitor and corresponding double sampling techniques is presented. The proposed circuit uses a low-gain amplifier to generate an accurate reference voltage so that this structure can be implemented in low-voltage environment. With proper design, the circuit can produce any output voltage between supply voltage and ground. The circuit was designed...
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