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A high linearity 4.9–5.9 GHz T/R FEM is presented. The FEM consists of a SiGe BiCMOS PA and a single-pole double-throw SOI switched LNA in a 3 × 3 × 0.6 mm QFN package. The Tx chain has > 31 dB gain and meets 3% EVM up to 22 dBm with harmonic and out-of-band emissions compliant to regulatory limits. The receive chain features 2 dB NF and 14 dB gain with −3 dBm IP1dB for LNA mode and 4.5 dB attenuation...
A highly integrated SiGe BiCMOS power amplifier for dual-band WLAN applications is presented. The PA has 2 and 3 stages of amplification for the 'b/g' and 'a' band, respectively, and integrates the input/output matching network, out-of-band rejection filter, power detector, and bias control. The die area is 1.7 × 1.6 mm2. The b/g amplifier achieves 28 dB gain with 19.5 dBm output power at 3% EVM and...
A highly integrated 5 x 5 x 0.9 mm dual-band wireless LAN front-end module (FEM) is presented. The FEM features 29 dB gain and 19 dBm at 54 Mbps with EVM < 3% and 180 mA for 2.4 to 2.5 GHz. For 4.9 to 5.9 GHz transmission, the FEM delivers 25 dB gain and 17 dBm at 54 Mbps with EVM < 3% and 195 mA. The FEM's receive chains can be realized either with LAN having >11.4 dB gain LNA gain with...
A compact 7 ? 8 ? 1.1 mm3 dual-band Wireless LAN front-end module (FEM) having high linearity and wide temperature (40 to 85?C) and voltage (2.7 to 4.5V) operating ranges is presented. The FEM features 28 dB gain and 19.8 dBm at 54Mbps with EVM < 3% and 230 mA for 2.4 to 2.5 GHz. For 4.9 to 5.9 GHz, the FEM delivers 25 dB gain and 16.5 dBm linear output power at 54Mbps with EVM < 3% and 190...
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