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Rutherford backscattering spectrometry (RBS) was performed on GaN layers grown on sapphire and annealed at temperatures between 500 and 1100 o C. Protons of energy 2 MeV were used for nanoscale depth-resolved RBS measurements. The simulation package SIMNRA was used to extract quantitative information from RBS results. Our results describe quantitatively the complete evaporation of GaN surface...
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