The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The impact of aluminum (Al) implantation into TiN/HfO2/ SiO2 on the effective work function is investigated. Al implanted through poly-Si cannot attain sufficient flatband voltage (VFB) shift unless at higher implantation energy. Al implanted through TiN at 1.2 keV with a dose of 5 × 1015 cm-2 raised the VFB to about 250 mV compared with a nonimplanted gate stack. Moreover, the VFB shift can be up...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.