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The impact of aluminum (Al) implantation into TiN/HfO2/ SiO2 on the effective work function is investigated. Al implanted through poly-Si cannot attain sufficient flatband voltage (VFB) shift unless at higher implantation energy. Al implanted through TiN at 1.2 keV with a dose of 5 × 1015 cm-2 raised the VFB to about 250 mV compared with a nonimplanted gate stack. Moreover, the VFB shift can be up...
We discuss several advancements over our previous report (S. Kubicek, 2006): - Introduction of conventional stress boosters resulting in 16% and 11% for nMOS and pMOS respectively. For the first time the compatibility of SMT (stress memorization technique) with high-kappa/metal gate is demonstrated. In addition, we developed a blanket SMT process that does not require a photo to protect the pMOS by...
A gate-first process was used to fabricate CMOS circuits with high performing high-K and metal gate transistors. Symmetric low VT values of plusmn 0.25 V and unstrained IDSAT of 1035/500 muA/mum for nMOS/pMOS at IOFF=100nA/mum and |VDD|=1.1 V are demonstrated on a single wafer. This was achieved using Hf-based high-k dielectrics with La (nMOS) and Al (pMOS) doping, in combination with a laser-only...
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