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Positive bias temperature instability (PBTI) of tunnel thin-film transistor (TFT) with poly-Si channel film is proposed for the first time. The novel interband tunneling transport mechanism of tunnel-TFT results in special PBTI behavior. For PBTI at 75 °C with stress voltage 10 V, tunnel-TFT exhibit excellent PBTI immunity compared to conventional TFT. However, the degradation of tunnel-TFT is getting...
The Lanthanum oxide (LaOx) capping layer induced flat-band voltage (VFB) roll-off behaviors for a high-κ/metal-gate n-MOSFET prepared by the 28nm CMOS technology are investigated in details. Experimental results show the VFB roll-off increases with EOT scaling down. With EOT =1 nm, 10 cycles and 20 cycles ALD LaOx capping layers cause significant VFB roll off ∼282 mV and∼ 550 mV to result in threshold...
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