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Lead zirconate titanate piezoelectric films were integrated into prototype one-dimensional array transducers. The geometry used for transducer arrays is a xylophone-bar type with a length:width aspect ratio greater than 5:1 in order to isolate the desired resonance modes. The PZT and remaining films in the stack were patterned using ion-beam etching and partially released from the underlying silicon...
The increasing difficulties for further scaling down of Si CMOS is bringing to the fore the investigation of alternative channel materials. Among these, III-V compound semiconductors are very attractive due to their outstanding electron transport properties. This paper briefly reviews the prospects and the challenges for a III-V CMOS technology with gate lengths in the 10 nm range.
A miniature silicon-based symmetric trace differential stacked spiral inductor (SDSSI) has been implemented using standard 0.18 μm CMOS technology. Based on the measured two-port S-parameter using a standard de-embedding procedure, the self-resonance frequency (fsr) and quality factor (Q) of the SDSSI were compared to a conventional differential stacked spiral inductor (DSSI). The fsr of the SDSSI...
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