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Photoluminescence (PL) imaging is demonstrated as a fast characterization tool allowing variations of the minority carrier lifetime within large area silicon wafers to be measured with high spatial resolution and with a data acquisition time of only one second. PL imaging is contactless and can therefore be applied to silicon solar cells before and after every processing stage including fully processed...
Photoluminescence imaging is used to compare similarly grown n-type and p-type string ribbon mc-Si wafers at two stages of solar cell processing. Key advantages of the PL imaging technique are that it is fast, contact-less, requires no sample preparation and is negligibly influenced by trapping artifacts, which can dominate lifetime measurements made by other methods on multicrystalline materials...
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