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Monolithic integration of III–V nanowires on silicon platforms has been regarded as a promising building block for many on‐chip optoelectronic, nanophotonic, and electronic applications. Although great advances have been made from fundamental material engineering to realizing functional devices, one of the remaining challenges for on‐chip applications is that the growth direction of nanowires on Si(001)...
In article number 2002220, Hyunseok Kim and co‐workers demonstrate a method to monolithically integrate III–V nanowires on silicon (001) platforms with the ability to control the position and orientation. The nanowire‐based ultracompact photonic crystal cavities are integrated on standard silicon photonic platforms with waveguides, which provides new opportunities in combining functional III–V devices...
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