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Defect-selective etching was developed for scandium nitride (ScN) crystals. ScN crystals were etched in fused KOH/NaOH eutectic mixtures between 180 and 440°C for up to 10min. Several etch pit shapes were observed, and their formation was dependent on the etching temperature. The different etch pit shapes probably originated from different crystalline orientations and defect types. Square etch pits...
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