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Threshold-voltage (Vth) fluctuation due to random telegraph signal (RTS) in flash memory was observed for the first time. A large amount of data of Vth fluctuation was acquired by using a 90-nm-node memory array, and it was confirmed that a few memory cells have large RTS fluctuation exceeding 0.2 V. It was found that program-and-erase cycles increase Vth amplitude in a flash memory. It was also found...
This paper describes for the first time the observation of the threshold voltage (Vth) fluctuation due to random telegraph signal (RTS) in flash memory. We acquired large-scale data of Vth fluctuation and confirm the existence of the tail bits generated by RTS. The amount of Vth broadening due to the tail bits becomes larger as the scaling advances, and reaches to more than 0.3 V in 45-nm node. Thus...
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