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The diffusion of Si adsorbates deposited on a Si(001) surface is studied by a reflection electron microscope (REM). The diffusion constants are obtained from the diffused lengths of the Si adsorbates. The activation energy of diffusion is determined with the Arrhenius plot of the diffusion constants. It is found that the activation energy on both 2 1 and 1 2 terraces changes at about 750°C....
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