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The topography of a Si(001) vicinal surface is investigated using reflection electron microscopy (REM) during alternating current (AC) heating of the surface in ultra-high vacuum. The normal direction of the surface is slightly tilted from the [001] direction at θx or θy on the x or y axis (they are orthogonal 〈110〉 directions in the Si(001) surface), and the average widths of the terraces (a or b...
When a Si(001) sample was heated to temperatures above 1500 K by passing a direct current through it, we observed the migration of a Si microcluster on the Si(001) surface by using an electron microscope. This microcluster migrates toward the anode side about 10 times as fast as the electromigration atoms and the migration of it is induced by the migration of Si atoms under it. We explain the migration...
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