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In this study, a detailed characterization on the microwave noise performance of high gain metamorphic heterojunction bipolar transistor (MHBT) in the temperature range of 300 K to 380 K is performed. The results are compared between the MHBT and the referenced lattice-matched InP HBT (LHBT) devices. The minimum noise figure (NF min ) versus frequency in the range of 2 to 20 GHz at different...
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