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Doped Quantum Layers
In article number 2200454, Yuyu Bu, Xiaohui Guo, and co‐workers fabricate a photogenerated hole transfer tunnel in a photoanode system via doped quantum layers.
Surface passivation of the photoelectrode by wide bandgap semiconductor quantum layer is an important strategy to improve work stability and surface state inhibition. However, an inevitable energy barrier is generated during the quantum tunneling process of the photocarriers. To overcome this shortage, a tandem photo‐generated hole transfer route is fabricated on BiVO4 photoanode by doped dual‐quantum...
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