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Since the SiGe or Ge channel materials are desirable to enhance the carrier mobility degraded by ultrathin high- gate dielectric, the pMOSFET device with novel superlattice (SL) SiGe channels is proposed in this letter. Experimental results show that the electrical characteristics of MOSFET can be obviously improved by an SL virtual substrate. The peak hole mobility of the pMOSFET device with SL...
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