The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Urban object detection places a vital role in urban planning and development. The edge detection algorithms are useful and efficient to perform the object detection. A new edge detection algorithm has been presented in this manuscript. The proposed edge detection algorithm used Chebyshev polynomial based fractional order differentiator. The convolution operation has been performed with fractional...
In this work, we have reported an efficient model to study the sub-threshold behaviour of Tri-Gate Dielectric Pocket InGaAs-On-Nothing MOSFET by solving 3D Poisson equation. The associated shortcoming of InGaAs based architecture (i.e. Short Channel Effects SCEs) is controlled by amalgamating Dielectric Pocket on to Tri-Gate InGaAs-On-Nothing MOSFET. The analytical results have been validated with...
This paper describes a 2.4GHz low noise amplifier (LNA) intended for use in receiver system. The design has been done in 180nm technology using CMOS. The proposed LNA uses inductive degeneration technique. This amplifier provides a forward gain of 15.72dB with a low noise figure of .307dB while drawing 6.5mW from 1.8V supply voltage. The LNA uses a transformer as load. This paper presents a detailed...
In present work, the impact of channel material engineering and gate oxide engineering on the RingFET architecture has been investigated for the first time. This investigation involves the study of various electrical parameters like drive current (Id-Vgs), threshold voltage (Vth), Sub-threshold Slope (SS), Drain Induced Barrier Lowering (DIBL), ION/IOFF, and transconductance generation efficiency...
An H-plane Substrate Integrated Waveguide (SIW) horn antenna is designed and simulated using the Ansoft HFSS software. The shape of the flare is varied from a simple linear taper to corrugated (square corrugation and triangular corrugation) and stepped impedance transformation. The performance of the antenna with different flares is analyzed and compared for optimum results.
In this paper we present an implementation for a typical Android application to support Plug-ins or add-on application to enhance functionality at run time. Such a framework allows an application to offer new functionality without updating the base application every time in the application store. Our implementation uses advanced bound services and AIDL concepts to provide communication between the...
A physics-based, charge-based model for P-type Gaussian doped DG MOSFET is presented in this work. The developed model is also applicable to the investigation of the impact of channel material on the performance of p-type DG MOSFET. The reliability issues of the p-type MOSFET have also been demonstrated using both developed analytical model and simulated results. The performance degradation due to...
In this work, the impact of gate material engineering on the performance of RingFET architecture i.e. Dual Material Gate RingFET (DMG-RingFET) has been investigated for the first time using ATLAS 3D device simulation. A fair comparison has also been drawn between the performance of DMG-RingFET and SMG RingFET device architectures. The impact of high-k gate dielectric on the performance of DMG RingFET...
A compact planar horn antenna is designed for operation in X-band. The H-plane horn antenna is designed using SIW technology. The antenna operated satisfactorily in a bandwidth of 200 MHz with a resonance at 9.75 GHz. It also gives a good H-plane pattern.
In the present work, a temperature-dependent analytical model for Dielectric Pocket Double Gate (DPDG) MOSFET is presented. The accuracy of the analytical results is verified by comparing it with the results of ATLAS 3D device simulator over wide range of operating temperatures i.e. 300K–500K. On the basis of the simulation results of different devices i.e. DP-DG, Double Gate (DG), and Dielectric...
The present work discusses the electrostatic integrity of Insulated Shallow Extension Silicon On Void (ISESOV) MOSFET examine by calculating the 2D potential in the channel region using Poisson's equation. The complete drain current model incorporating velocity overshoot effect and the Channel Length Modulation effect (CLM) has also been developed for channel length down to 32nm. Furthermore, the...
In the present paper, the application of Laterally Asymmetric Channel Insulated Shallow Extension Silicon On Nothing (LAC-ISE-SON) architecture for analog and digital circuits is analyzed. The LAC-ISE-SON architecture shows improved reliability and hot carrier degradation issues as compared to symmetric channel ISE-SON architecture optimized at the same threshold voltage. The improved analog and digital...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.