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The dependence of resonator length on the threshold power and emission wavelength of electron-beam-pumped UV-A edge-type emitting lasers is demonstrated. The lowest pump power thresholds are achieved for 100–$200~\mu \text{m}$ long resonators, where there is good overlap of the focused e-beam spot with the resonator cavity. For longer resonator lengths the focused circular e-beam spot excites only...
In-well-pumped blue InGaN/GaN vertical-external-cavity surface-emitting lasers are demonstrated. The laser structures were grown on bulk GaN substrates by using metal-organic vapor phase epitaxy near atmospheric pressure. The active zone consisted of up to 20 InGaN quantum wells distributed in a resonant periodic gain configuration. High-reflectivity dielectric distributed Bragg-reflectors were used...
Recent progress in the development of ultraviolet laser diodes will be reviewed. The effect of the heterostructure design on the gain characteristics as well as epitaxial growth challenges for AlGaN-based UV lasers will be discussed.
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