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Beyond traditional heteroepitaxy, 2D‐materials‐assisted epitaxy opens opportunities to revolutionize future material integration methods. However, basic principles in 2D‐material‐assisted nitrides’ epitaxy remain unclear, which impedes understanding the essence, thus hindering its progress. Here, the crystallographic information of nitrides/2D material interface is theoretically established, which...
Spontaneous Lattice Inversion
In article number 2200057, Zhiqiang Liu, Shenyuan Yang, Yong Zhang, Peng Gao, and co‐workers confirm the polarity of AlN on sapphire prepared by metal–organic chemical vapor deposition is not inherited from the nitrides/sapphire interface as widely accepted, instead, experiences a spontaneous polarity inversion. Furthermore, a vertical 2D electron gas is revealed at the...
The performance of nitride devices is strongly affected by their polarity. Understanding the polarity determination and evolution mechanism of polar wurtzite nitrides on nonpolar substrates is therefore critically important. This work confirms that the polarity of AlN on sapphire prepared by metal–organic chemical vapor deposition is not inherited from the nitrides/sapphire interface as widely accepted,...
The nitride films with high indium (In) composition play a crucial role in the fabrication of In‐rich InGaN‐based optoelectronic devices. However, a major limitation is In incorporation requiring a low temperature during growth at the expense of nitride dissociation. Here, to overcome this limitation, a strain‐modulated growth method, namely the graphene (Gr)‐nanorod (NR) enhanced quasi‐van der Waals...
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