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The modelling of bandgap narrowing and partly ionized impurity atoms in uncompensated, uniformly doped coherently strained Si 1-x Ge x alloys on a 001 Si substrate [containing conventional impurities (B, P, As, Sb)] under charge-neutral conditions is presented. The above is a generalization of previous work of the authors for Si [Mamontov and Willander, IEICE Trans....
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