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The low-frequency noise in strained and relaxed Ge pMOSFETs is characterized to investigate more closely the anomalously large current spectral density at low drain currents. As shown, the dominant Lorentzian spectrum found in weak inversion points to fluctuations by generation-recombination (GR) events at substrate defects. This is confirmed by the fact that strained Ge transistors, having a significantly...
The low-frequency (LF) noise behaviour of pMOSFETs fabricated in strained Ge (sGe) and reference thick Ge-on-Si epitaxial layers has been compared. As is shown, the LF noise in the subthreshold regime is higher for the reference devices compared with the sGe, while in strong inversion, similar noise levels are achieved. The better noise performance in weak inversion is related to the lower density...
To address the integration of the high-mobility Ge/III-V MOSFET, a common gate stack (CGS) solution is proposed for the first time and demonstrated on Ge and InGaAs channels with combined hole and electron field-effect mobility values up to 400 cm2/eV-s and 1300 cm2/eV-s. Based on the duality found on the InGaAs/Ge MOS system, this approach aims to integrate the InGaAs/Ge MOSFET processes for high...
In this study, we report a direct comparison between two epitaxial silicon processes: 500degC using SiH4 and 350degC using Si3H8. Following four different metrics, we demonstrate that the reduction of silicon growth temperature results into the introduction of negatively charged defects possibly located at the Si/SiO2interface. However, the Epi Si growth at 350degC with Si3H8 remains beneficial compared...
A novel RFCV-technique is applied to directly quantify the short channel devices at high Vds, enabling parameter extraction like velocity saturation and critical field. This technique is applied to benchmark Si (110) and Si(100) as well as Ge devices. Similarities and crucial differences between short channel parameters in Si and Ge are discussed.
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