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We have grown, via molecular beam epitaxy (MBE), the first metamorphic In0.26Ga0.74P solar cells with a 2.19 eV direct bandgap on GaP to serve as the top cell in a multi-junction device. Calculations show that the incorporation of a 2.0–2.2 eV top cell into future 4–6 junction cells could enable efficiencies as high as 60%. GaAsxP1−x graded buffers enabled a moderate threading dislocation density...
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