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The defects produced in 4H–SiC epitaxial layers by irradiation with 800keV C + were characterized by Low Temperature Photoluminescence. Ion beam irradiation induces the formation of some sharp lines in the wavelength range 428–441nm of the photoluminescence spectra, that are typically known as “alphabet lines”. These photoluminescence features are due to the recombination of excitons at structural...
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