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Previous work on pseudomorphic SiGe on Si has shown that a significant reduction in the threading dislocation density can be achieved through appropriate ion beam processing. Helium ion implantation was used in an analogous study to induce strain relaxation within strained pseudomorphic InGaAs layers on GaAs through the intentional introduction of subsurface damage without the introduction of surface...
During plastic deformation of FCC materials, dislocation density does not evolve uniformly but a dislocation cell/wall structure is formed. X-ray diffraction reciprocal space mapping is used to investigate this substructure within a single grain in a large grained aluminium polycrystal. A simple dislocation cell/wall model capable of computing numerical reciprocal space maps is presented. The model...
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