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For 50-ohm microstrip and coplanar lines constructed on a copper-clad ceramic/PTFE glass cloth laminate substrate AR-1000, the propagation constants gamma=alpha+jszlig, where alpha is attenuation constant and beta is phase constant, are calculated with the 3-dimensional electromagnetic simulator HFSS and 2.5-dimensional simulator Sonnet em in the frequency range 1 to 20 GHz. Particularly, the attenuation...
A robust low-k diffusion barrier, i.e., advanced SiC(O) (A-SiC(O), k = 3.5), was developed to attain a keff of less than 2.7 for reliable ultra-low-k/Cu integration for 45-nm node technology and beyond. A new precursor that requires that requires no oxidizing agent was introduced for deposition to obtain higher film density while maintaining the k-value. The A-SiC(O) film has a low leakage current...
The mechanism of UV and EB cure processes for porous low-k SiCOH materials was investigated by using experimental results obtained using PECVD and SOD films as well as simulated results. Both UV and EB cures induced dielectric constant change and Young's modulus improvement because Si-OH elimination (moisture removal) and cross-link formation occurred during film shrinkage. Excess UV curing, however,...
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