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The influence of the AlInN thickness (65–145 nm) on the photovoltaic characteristics of In‐rich n‐AlxIn1−xN (x ≈0.38–0.42) on p‐Si(111) heterojunctions deposited by radio frequency sputtering has been reported. All samples show a closely packed columnar morphology with a root mean‐squared surface roughness below 3.7 nm and an apparent optical bandgap energy of ≈2.0 eV. Dark current density–voltage...
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