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The photoluminescence (PL) peak of an InAs/GaSb superlattice (SL) structure is found to be shifted from 5.8 to 4.0 at 77 K, when the growth temperature is lowered from 380 to 340. The PL peak shift is related to In intermixing, thus some SL structures cannot reach a detection wavelength . Increasing the GaSb layer thickness in the SL structure is an...
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