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Based on a device-first transfer process, a 3-inch polycrystalline diamond substrate is bonded within $1.5~\mu \text{m}$ of the junction in GaN high electron mobility transistors (HEMTs) to enhance heat removal of the high-power RF devices. Highly preserved electrical performance is demonstrated by comparison exactly on the same HEMT device prior and after substrate transfer. The residual compressive...
A GHz SAW device with two face-to-face interdigitated transducers (IDTs) was fabricated on self-standing semi-insulating GaN substrate. Using an advanced e-beam lithographical techniques, the IDTs with 0.5μm wide fingers and spacing have been fabricated on self-standing GaN substrate. On wafer measurement of the S parameters have demonstrated the operation at approximately 2 GHz with 10dB insertion...
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