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Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By using data measured on n-type silicon wafers with resistivity from 1Ω.cm to 100Ω.cm, we have previously developed a simple mathematical expression to describe the mobility sum as a function of carrier...
Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of the electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By separately analyzing those three functional dependences, we then develop a simple mathematical expression to describe the mobility sum as a function of carrier injection wafer doping and temperature...
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