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Compensated doping is typical of upgraded metallurgical silicon. The relatively low carrier mobility associated to high concentrations of both acceptors and donors leads to paradoxical effects on solar cell performance. While the short-circuit current is expected to decrease compared to non-compensated silicon of the same resistivity, the open-circuit voltage is predicted to increase when bulk recombination...
Three electronic circuits that facilitate the measurement of I-V characteristics of solar cells are described and analyzed. The first circuit enables the measurement of the one-sun illumination and dark I-V curve in a steady state fashion. The second circuit is based on a large capacitor, which, when discharged, forces the cell to progress in a quasi-static (QSS) transition through different voltage...
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