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The processing parameter dependence of the performance of amorphous silicon-indium-zinc-oxide (a-SIZO) films was systematically investigated for Thin Film Transistors (TFTs). The SIZO thin films were prepared on a SiO 2 /p-Si substrate using 2 wt% Si-doped IZO (2SIZO) ceramic target through an RF-magnetron sputtering process with various process parameters, such as RF power and oxygen partial...
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