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Electron backscatter diffraction (EBSD) in a scanning electron microscope provides access to grain-size and local-orientation distributions, film textures and grain-boundary types of thin-film solar cells. Since EBSD exhibits an information depth of only about 20 nm in Cu(In, Ga)(S, Se)2 and CdTe thin films, the most important issue of the corresponding analyses is an appropriate preparation of layer...
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