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The novel use of SiCN underneath TEOS oxide as a bonding surface in the wafer bonding of Backside-illuminated (BSI) sensor is proposed and the mechanism of void control by SiCN is clarified. In general, high-temperature processing results in generating voids between the wafer interfaces after bonding due to the release of high-pressure H2O contained in TEOS. In the proposed mechanism, the SiCN exposed...
The advantages of the SiOCH low-k films with hydrocarbon cross-links (hydrocarbon bridges) Si-Cn-Si have been reported recently. However, hydrocarbon cross-links are not produced so selectively by the PECVD method, since the hydrocarbon components tend to form terminal atom groups such as Si-CH3. For producing hydrocarbon cross-links effectively by the PECVD method, the polymerization reactions of...
In order to control the characteristics of porogen-based porous SiOC film (k < 2.5), we investigated its dependence on the wavelengths of ultraviolet (UV) light by using methods of FT-IR, TDS and nano-indentation. As a result, it was found that specific wavelengths of UV light strongly was effective to porous SiOC film production : porogen desorption, mechanical strength improvement, and reduction...
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