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This paper summarizes and analyzes some of our previous works on the advanced gate stacks for CMOS transistors focused on the following two topics: 1. Frequency dependence of Dynamic Bias Temperature Instability (DBTI) and the transistor degradation mechanism, 2. A novel way for metal gate Effective Work Function (EWF) modulation by incorporation of lanthanum elements in HfO 2 gate dielectric.
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