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How to effectively enhance the reliability robustness in high-voltage BCD processes is an important issue. A p-channel lateral-diffused MOSFET with an embedded SCR which is formed by implanting N+ doses in the drain side and divided into five regions, this structure called as the "pnpnp" arranged-type of pLDMOS-SCR in this paper (diffusion regions of the drain side is P+-N+-P+-N+-P+). Then,...
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