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We have successfully demonstrated a 0.34mum2 COB cell 1T1C 64Mb FRAM at 150nm technology node. The minimum signal window between data "1" and data "0" of 64M bit cells was evaluated to 300mV at 85degC, 1.6V VDD. This wide signal window was achieved by introducing advanced anneal technology and optimized capacitor layout, from which the variation of individual cell charge was greatly...
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