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We report effects of post-annealing on Indium Tin Oxide (ITO) thin films by their physical, electrical, optical, and electronic properties. Carrier concentrations increase up to annealing temperatures of 400°C, and then decrease at higher annealing temperatures. Burstein–Moss effect occurs as a function of annealing temperature with the highest optical bandgap of 4.17eV achieved at 400°C. X-ray photoelectron...
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