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Nitrogen doping often induces the band-gap reduction for III-V semiconductors. To understand its origin, the chemical trend of reduction is studied by the first-principles calculation with comparing the cases of various III-V compounds. We found that III-V semiconductors are categorized into two groups; the large band-gap reduction occurs for InP and GaAs, while there is little reduction and appears...
Electronic structures of N-layer and N-point defect systems in bulk GaSb were studied by the first-principles calculations. It is shown that, though the band-gap reduction occurs in both systems, the origins of band-gap reduction are different between two systems, reflecting the difference of topological connection of N atoms.
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