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A theoretical analysis of the STM image of the Sn/Ge(111)-(3×3) surface is presented. In a first step, the atomic structure is reached using a combination of local-orbital and plane-wave density functional methods. We found a ground state geometry presenting two different types of Sn adatoms, with vertical positions differing by ∼0.3 A ̊. In a second step, this geometry was used to analyze the tunneling...
The effect of different atomic intralayers on the Schottky barrier height φ bn of covalent and ionic semiconductors has been studied theoretically. The following cases have been analysed: H/Si(111), Sb/Si(111), S/Ge(100), H/GaAs(110), Sb/GaAs(110) and As/GaAs(110). Our results show that φ bn is reduced by all the intralayers and that this reduction increases with the intralayer electronegativity...
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