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Boron doped ZnO (ZnO:B) thin films on silicon substrates were synthesized with the sol–gel method using the spin coating technique. The films were irradiated by 80MeV Br+6 ions at various ion fluences. The X-ray diffraction results indicate that ZnO:B crystallized in the normal hexagonal wurtzite structure of ZnO. X-ray photoelectron spectroscopy data indicated that the O1s peak consist of three components...
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