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In this paper, a novel equivalent circuit of high voltage LDMOS is presented, which can be embedded into SPICE and applied in high voltage integrated circuits design. Compared with the conventional circuit models of LDMOS, this model does not divide the on-state region of LDMOS into a linear region and a saturation region. Consequently, the formulas for the circuit model contain fewer parameters easily...
An analytical method is proposed in order to compute the on-resistance in high-voltage power device LDMOS with structure of deep n-well and fried plate. With the equivalent series circuit of LDMOS resistance presented, by considering the exponential doping distribution in channel, the channel current equation is modified in this paper. In drift region, the resistance is divided into four components...
An analytical model for surface electrical field distribution along the drift region of double RESURF LDMOS with the gate and the drain field plates is presented, which takes the influence of non-uniformly doping concentration into account. Based on the 2D Poisson equation, the model provides an closed solution of electrical field distribution including the off-state and the on-state under different...
The temperature characteristics (at -27degC-300degC) on high voltage power LDMOS are discussed, and a calculation formula of threshold voltage's temperature coefficient is given in this paper. Computing results show that the threshold voltage temperature coefficient of a high voltage power LDMOS is a constant in a wide range of temperature, a linear expression can be used to describe its temperature...
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