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We propose the suspended membrane GaN light-emitting diodes with reflective mirror on silicon platform by back wafer processing. Silicon substrate under emission region is removed. Suspended membrane is thinned from backside and evaporated a reflective metal mirror. Multiple optical and electrical measurements are taken to characterize the performance of LEDs. Current density of suspended LED with...
We show the fabrication and characterization of a suspended GaN-based nanostructure in the visible wavelength region that combines InGaN/GaN multiple quantum wells (MQWs) active layer with rib waveguides and then creates multiple separate beamlets. It is implemented on a GaN-on-silicon platform, where silicon substrate is removed and suspended epitaxial films are thinned by back wafer etching technique...
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