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The present work reports some experimental results based on capacitance measurements on float-zone silicon (Fz-Si) and Czochralski-grown silicon (Cz-Si) subjected to oxygen implantation, subsequent neutron irradiation and finally high-pressure thermal anneals. The purpose of this work was the study of the effect of irradiation on the formation of thermal acceptors and donors in silicon. We found that...
The effect of annealing at 720-920 K under enhanced pressure (up to 1.1 GPa) in argon ambient on electrical properties of the surface layer of the Czochralski-grown silicon (Cz-Si) subjected to neutron irradiation (doses of up to 1x10>sup>17 cm-2, E = 5 MeV) or germanium doping (doping level 7x1017 cm-3) was investigated by electrical C-V, I-V and admittance method. The stress-induced decrease in electron concentration was observed in both p- and n-type samples after neutron irradiation and annealing under a pressure of 1.1 GPa at 720 K for 10 hours, while in the germanium doped samples an ascending dependence of the creation of thermal donors and lack of dependence of new donors on hydrostatic pressure was observed. The effects observed can be explained as resulting, among others, from the irradiation-induced defects (generation of thermal acceptors) and pressure stimulated creation of thermal donors in germanium-doped silicon....
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