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Magnetoelectric Multifunctional Nanodevices
In article number 2206824, Run‐Wei Li, Xiaojian Zhu, and co‐workers demonstrate the selective dual‐ion manipulation in a Pt/HfO2−x/NiOy/Ni magnetoelectric nanodevice and the reconfiguration of its magnetoresistance. A proof‐of‐concept magnetoelectric device with integrated memory and encryption functionality is designed for the secure storage of information...
Nanoionic technologies are identified as a promising approach to modulating the physical properties of solid‐state dielectrics, which have resulted in various emergent nanodevices, such as nanoionic resistive switching devices and magnetoionic devices for memory and computing applications. Previous studies are limited to single‐type ion manipulation, and the investigation of multiple‐type ion modulation...
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