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Depth profiles of residual strain in free‐standing GaN substrates have been successfully measured by a novel method employing cross‐sectional micro‐reflectance spectroscopy. This method can precisely measure very small strains (∼0.01%) with micron‐order spatial resolution. In addition, we have established a theoretical framework to calculate the depth profiles of intrinsic strain, which cause the...
Photoluminescence spectra of c ‐plane Mg doped GaN samples grown by MOVPE on bulk GaN templates reveal previously unknown properties, like the presence of several Mg‐related acceptors. The use of unstrained samples allows a study of both bound exciton (BE) and donor‐acceptor pair (DAP) spectra. Two main acceptors A1 and A2 are observed strongly in BE spectra as well as in DAP spectra, they have similar...
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