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Grain size of vanadium dioxide (VO 2 ) films or isolated particles is known to play an important role in the modulation of temperature dependence of the hysteresis width in semiconductor to metal transition. In order to investigate the effect of grain size on the hysteresis width, we prepare a range of VO 2 films consisting of spheroidal nanoparticles whose mean size was hugely modulated...
ZnMgO: Ti transparent conducting thin films have been deposited on glass substrates by DC-magnetron sputtering, and the effects of sputtering pressure on their properties have been investigated. Electrical resistivity as low as 7.84*10 −4 Ω cm was achieved for ZnMgO: Ti thin film. All thin films provided high optical transparencies in the visible region. Thin films deposited at 6 Pa, 8 Pa...
Nanostructured vanadium oxide (nano-VO x ) films were prepared on indium-tin oxide (ITO) glass substrate at low temperature by means of direct current (DC) reactive magnetron sputtering from pure vanadium target in Ar + O 2 atmosphere. Field emission scanning electron microscope (SEM) reveals that the VO x film is composed of spheroidal nanoparticles whose diameters are in...
Highly conducting and transparent thin films of tungsten-doped ZnO (ZnO:W) were prepared on glass substrates by direct current (DC) magnetron sputtering at low temperature. The effect of film thickness on the structural, electrical and optical properties of ZnO:W films was investigated. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the...
Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) films were deposited on quartz substrates by direct current (DC) magnetron sputtering at room temperature. The influence of post-annealing temperature on the structural, morphological, electrical and optical properties of ZnO:Zr films were investigated. When annealing temperature increases from room temperature to 573 K, the resistivity decreases...
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