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We developed Al2O3 and HfO2 plasma-enhanced atomic layer deposition (PEALD) processes as part of the integration of a new high-k/In0.53Ga0.47As gate stack. The Al2O3 featured a bandgap of 7.0eV and a k-value of 8.1, while the HfO2 presented a bandgap of 6.2eV and a k-value of 14.6. W/HfO2/Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated and different In0.53Ga0.47...
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