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In coplanar structure thin‐film transistor (TFT), the formation of source/drain region with doping process is important to get high mobility. In this paper, the effects of NH3 plasma treatment to form n+ region have been investigated. The results show that the top gate coplanar structure Amorphous indium‐gallium‐zinc‐oxide(a‐IGZO) TFTs with n+ source/drain by NH3 treatment exhibit high mobility and...